Abstract
Research of redistribution of impurities in silicon wafers under influence of white light pulses. / A. B. Gerasimov, G. D. Chiradze. / Nano Studies. – 2020. – # 20. – pp. 95-98. – rus. The aim of this work is to study the redistribution of impurities in silicon wafers caused by exposure to white light pulses. There are investigated silicon wafers of n-type conductivity doped with phosphorus with resistivity of 0.5 Ohm·cm and thickness of 500 μm (KEF–0.5). The samples surface was treated according to the 14th class of cleanliness. In order to remove natural oxide, before exposure to light and before each measurement the samples were processed in aqueous solution of HF in ratio of 1:50 for 50 s. Microhardness was measured by the indentation method. It was found that in the region, where the microhardness decreases in comparison with the initial sample, the impurity concentration increases, while in the region of increasing microhardness the concentration decreases. With an increase in the duration of light pulses and their number, the effect of redistribution of impurity atoms increases. Moreover, the effect of redistribution is greater near the surface, from which the illumination took place. Fig. 2, Ref. 7.